FDPF190N15A Fairchild Semiconductor, FDPF190N15A Datasheet - Page 2

• Manufacturer Part Number: FDPF190N15A
• Description: This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
• Manufacturer: Fairchild Semiconductor

FDPF190N15A Rev. A2
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
Q
Q
Q
t
t
t
t
ESR
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss(er)
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
FDPF190N15A
J
≤ 27.4A, di/dt ≤ 200A/μs, V
DSS
AS
= 13.2A, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
DD
FDPF190N15A
≤ BV
Device
DSS
Parameter
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220F
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
V
f = 1MHz
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
DS
GS
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs, V
= 120V, V
= 120V, T
= 0V, I
= ±20V, V
= 10V, I
= 25V, V
= 75V, V
= 120V, ID = 27.4A
= 75V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
SD
2
SD
D
D
Reel Size
D
D
GS
GS
GS
GEN
= 27.4A
= 27.4A
= 27.4A
= 27.4A
= 27.4A
GS
C
= 250μA
DS
= 150
= 0V
= 0V
= 0V
-
= 0V
= 0V
= 4.7Ω
DD
o
= 120V
C
(Note 4, 5)
o
(Note 4)
(Note 4)
C
Tape Width
-
Min.
150
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2020
Typ.
0.18
0.14
14.7
700
252
8.8
7.3
1.5
76
64
56
30
18
16
32
-
-
-
-
-
-
-
8
-
Quantity
www.fairchildsemi.com
Max.
±100
2685
27.4
19.0
500
930
110
1.3
4.0
85
39
46
42
74
26
1
50
-
-
-
-
-
-
-
-
-
Units
V/
mΩ
μC
μA
nA
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V
o
C