BSS138W Fairchild Semiconductor, BSS138W Datasheet - Page 4

• Manufacturer Part Number: BSS138W
• Description: These N-Channel enhancement mode field effect transistor
• Manufacturer: Fairchild Semiconductor

BSS138W Rev. A0
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 11. Transient Thermal Response Curve.
10
10
10
10
10
0.01
10
Figure 9. Maximum Safe Operating Area.
0.1
-1
-2
-3
8
6
4
2
0
1
0
10
1
Figure 7. Gate Charge Characteristics.
0.0
1E-4
-1
I
D=1%
D
= 220mA
10%
2%
5%
50%
30%
Single Pulse
1E-3
0.2
R
DS(on)
V
0.01
DS
Limit
10
0.4
, Drain-Source Voltage [V]
0
V
Qg. Gate Charge (nC)
DS
Rthja=367
Single Pulse
T
V
= 8V
a
t1, time(sec)
GS
0.1
= 25
=10V
o
0.6
C
o
C/W
V
DS
DC
1
= 30V
1s
100ms
0.8
10
Rthja(t)=r(t)*Rthja
Rthja=367
1
10ms
10
1ms
100
V
o
1.0
C/W
DS
μ
s
100
= 25V
1.2
10
(Continued)
1000
2
4
100
80
60
40
20
5
4
3
2
1
0
1E-3
0
0
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum
C
C
OSS
0.01
ISS
10
Power Dissipation.
C
RSS
t1, Time(sec)
20
0.1
V
DS
. Voltage Bias (V)
30
1
Single Pulse
Rthja=367
T
A
40
=25
10
f = 1MHZ
V
GS
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= 0V
o
C/W
50
100