FQI4N90 Fairchild Semiconductor, FQI4N90 Datasheet
FQI4N90
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FQI4N90 Summary of contents
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... A = 25°C) C Parameter October 2001 QFET = 3 DS(on " " ! " ! " " " " " FQB4N90 / FQI4N90 Units 900 V 4.2 A 2. 570 mJ 4 4.0 V 3.13 W 140 W 1.12 W/°C -55 to +150 °C 300 °C Typ Max ...
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... ≤ 4.2A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...
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... Drain Current and Gate Voltage 1500 C 1200 iss 900 C oss 600 C rss 300 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V GS ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 ...
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... G G 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation DUT DUT + + Driver Driver Same Type Same Type ...
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... Mechanical Dimensions ©2001 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. B, October 2001 ...
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... Mechanical Dimensions ©2001 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. B, October 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...