FDD8N50NZ Fairchild Semiconductor, FDD8N50NZ Datasheet - Page 4
FDD8N50NZ
Manufacturer Part Number
FDD8N50NZ
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD8N50NZ.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8N50NZ
Manufacturer:
ON/安森美
Quantity:
20 000
FDD8N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
50
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
DS(on)
0.01
0.1
0
2
1
*Notes:
10
1. T
2. T
3. Single Pulse
0.05
0.5
0.2
0.02
0.1
0.01
Single pulse
-5
C
J
= 150
= 25
Figure 11. Transient Thermal Response Curve
50
o
o
C
100
C
*Notes:
10ms
DC
1ms
10
[
1. V
2. I
100
o
100
C
-4
D
GS
]
μ
= 250
s
= 0V
30
μ
Rectangular Pulse Duration [sec]
μ
s
A
1000
150
10
(Continued)
-3
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7.0
5.6
4.2
2.8
1.4
0.0
10
Figure 8. On-Resistance Variation
-100
Figure 10. Maximum Drain Current
25
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
-50
50
JC
T
T
J
- T
C
(t) = 1.4
, Junction Temperature
vs. Temperature
, Case Temperature
10
C
vs. Case Temperature
= P
t
-1
1
t
2
o
DM
C/W Max.
75
0
* Z
1
θ
/t
JC
2
(t)
100
50
1
[
o
C
*Notes:
[
]
1. V
2. I
o
100
125
C
D
]
GS
= 3.25A
= 10V
www.fairchildsemi.com
150
150