FCD4N60 Fairchild Semiconductor, FCD4N60 Datasheet - Page 3

• Manufacturer Part Number: FCD4N60
• Manufacturer: Fairchild Semiconductor

FCD4N60 Rev. B1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
1200
1000
0.1
4
3
2
1
0
10
800
600
400
200
0.0
1
0.1
0
10
Top :
Bottom :
Drain Current and Gate Voltage
0
10.0 V
15.0 V
5.5 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
V
2.5
GS
V
V
DS
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
, Drain Current [A]
1
5.0
C
C
C
iss
rss
oss
V
GS
= 10V
7.5
10
1
C
C
C
iss
oss
rss
= C
= C
= C
10
* Note : T
* Notes :
gs
gd
ds
1. 250
2. T
V
+ C
10.0
+ C
GS
C
gd
gd
= 20V
= 25
(C
* Notes :
μ
s Pulse Test
J
1. V
2. f = 1 MHz
ds
= 25
o
= shorted)
C
GS
o
C
= 0 V
12.5
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
12
10
10
10
10
10
8
6
4
2
0
10
10
-1
0
1
0
-1
0.2
1
0
2
Variation vs. Source Current
and Temperatue
0.4
V
4
Q
V
SD
G
GS
150
25
5
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
o
o
150
C
C
0.6
o
C
V
V
DS
V
DS
DS
= 480V
6
= 300V
25
= 120V
o
-55
C
0.8
o
C
10
* Notes :
1. V
2. 250
* Note
* Note : I
1. V
2. 250
GS
8
μ
DS
= 0V
1.0
s Pulse Test
= 40V
μ
s Pulse Test
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D
= 3.9A
1.2
15
10