FQU13N06L Fairchild Semiconductor, FQU13N06L Datasheet - Page 3

• Manufacturer Part Number: FQU13N06L
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
800
600
400
200
10
10
300
200
100
0
1
0
10
10
0
-1
-1
Top :
Bottom : 3.0 V
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10.0 V
Drain Current and Gate Voltage
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
V
GS
GS
= 10V
C
V
oss
GS
C
iss
= 5V
10
C
V
V
rss
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
0
※ Notes :
1. 250μ s Pulse Test
2. T
20
C
= 25℃
C
C
C
iss
oss
rss
= C
= C
= C
10
30
※ Note : T
gs
ds
gd
1
+ C
+ C
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
J
GS
10
= 25℃
= shorted)
= 0 V
1
40
10
10
10
10
10
10
-1
-1
1
0
1
0
12
10
0.2
0
8
6
4
2
0
0
150 ℃
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25 ℃
Figure 2. Transfer Characteristics
0.4
150 ℃
Variation vs. Source Current
2
2
-55 ℃
0.6
Q
V
V
and Temperature
GS
SD
G
, Total Gate Charge [nC]
25 ℃
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
DS
4
V
= 48V
4
0.8
DS
= 30V
1.0
6
6
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
DS
GS
= 25V
= 0V
8
8
D
1.4
= 13.6A
Rev. A2.January 2009
10
1.6
10