FDT3N40 Fairchild Semiconductor, FDT3N40 Datasheet

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FDT3N40

Manufacturer Part Number
FDT3N40
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. A
FDT3N40
400V N-Channel MOSFET
Features
• 2A, 400V, R
• Low gate charge ( typical 4.5 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature
* Surface Mounted on JESD51-3 Board, T<0.1sec.
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
JA
T
STG
*
rss
( typical 3.7 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Case-to-Sink Typ.
= 3.4 @V
D
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25C
Parameter
Parameter
C
G
= 25C)
SOT-223
FDT Series
S
C
C
= 25C)
= 100C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Typ
--
FDT3N40
-55 to +150
2.0
1.2
8.0
0.02
400
30
300
0.2
4.5
46
2
2
*
*
*
Max
UniFET
60
November 2009
www.fairchildsemi.com
Unit
W/C
Unit
C/W
V/ns
mJ
mJ
C
C
W
V
A
A
A
V
A
TM

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FDT3N40 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink Typ. JA * Surface Mounted on JESD51-3 Board, T<0.1sec. ©2009 Fairchild Semiconductor Corporation FDT3N40 Rev. A Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... DD G  2A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDT3N40 Rev. A Package Reel Size SOT-223 330mm T = 25°C unless otherwise noted C Conditions 250 ...

Page 3

... Figure 5. Capacitance Characteristics 350 300 C oss 250 C iss 200 150 100 C rss Drain-Source Voltage [V] DS FDT3N40 Rev. A Figure 2. Transfer Characteristics Notes :  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 10V ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDT3N40 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes :  250 A 0 100 150 200 0.0 -100 o C] Figure 10 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDT3N40 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDT3N40 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDT3N40 Rev. A SOT-223 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ ...

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