FDB12N50F Fairchild Semiconductor, FDB12N50F Datasheet - Page 3

• Manufacturer Part Number: FDB12N50F
• Manufacturer: Fairchild Semiconductor

FDB12N50F Rev.C0
Typical Performance Characteristics
0.05
2000
1500
1000
0.1
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
30
10
0.9
0.8
0.7
0.6
0.5
500
Figure 1. On-Region Characteristics
1
0.1
0
0.1
0
V
GS
=
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
Drain Current and Gate Voltage
V
DS
DS
C
C
,Drain-Source Voltage[V]
C
, Drain-Source Voltage [V]
I
oss
iss
rss
D
, Drain Current [A]
V
6
GS
= 10V
1
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
V
*Notes:
GS
1. 250
2. T
= 20V
* Note : T
C
12
= 25
μ
s Pulse Test
(
C ds = shorted
o
* Note:
C
1. V
2. f = 1MHz
J
10
= 25
10
GS
= 0V
o
C
20
)
18
30
3
100
30
Figure 2. Transfer Characteristics
10
10
Figure 4. Body Diode Forward Voltage
10
Figure 6. Gate Charge Characteristics
1
1
8
6
4
2
0
0.0
4
0
V
SD
4
, Body Diode Forward Voltage [V]
150
Q
V
Variation vs. Source Current
and Temperature
0.5
5
g
GS
V
V
V
, Total Gate Charge [nC]
o
DS
DS
DS
C
,Gate-Source Voltage[V]
= 100V
= 250V
= 400V
8
150
o
C
1.0
12
6
25
* Notes :
o
25
C
1. V
2. 250
o
Notes:
1. V
2. 250
* Note : I
C
16
DS
GS
μ
= 20V
μ
s Pulse Test
1.5
= 0V
s Pulse Test
7
D
20
= 11.5A
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2.0
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