FQT1N60C Fairchild Semiconductor, FQT1N60C Datasheet
FQT1N60C
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FQT1N60C Summary of contents
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... Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient* θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FQT1N60C Rev. A Description = 0.1A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... DD G ≤ 0.2A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FQT1N60C Rev unless otherwise noted C Package Reel Size SOT-223 330mm Test Conditions I = 250µ ...
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... Figure 5. Capacitance Characteristics 250 200 C iss 150 C oss 100 C rss Drain-Source Voltage [V] DS FQT1N60C Rev. A Figure 2. Transfer Characteristics 10 ※ Notes : 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage = 10V 20V GS N ote : ℃ ...
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... 150 J 3. Single Pulse - Drain-Source Voltage [ FQT1N60C Rev. A (Continued) Figure 8. On-Resistance Variation N otes : ※ 250 µ 100 150 200 o C] 0.20 0.18 0.16 100 µ 0. ...
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... FQT1N60C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FQT1N60C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + ...
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... Mechanical Dimensions 2.30 TYP (0.95) FQT1N60C Rev. A SOT-223 ±0.10 3.00 MAX1.80 0.70 ±0.10 (0.95) ±0.25 4.60 ±0.20 6.50 7 +0.04 0.06 –0.02 +0.10 0.25 –0.05 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQT1N60C Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ PowerTrench i-Lo™ IntelliMAX™ Programmable Active Droop™ ...