FDB14N30 Fairchild Semiconductor, FDB14N30 Datasheet
FDB14N30
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FDB14N30 Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDB14N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... G ≤ 14A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB14N30 Rev. A Package Reel Size D2-PAK 330mm T = 25°C unless otherwise noted C Conditions 250μ ...
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... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C oss C iss 1000 C rss Drain-Source Voltage [V] DS FDB14N30 Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 2 10 ...
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... Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDB14N30 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FDB14N30 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FDB14N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FDB14N30 Rev. A D2-PAK 7 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ ...