FQI4N80 Fairchild Semiconductor, FQI4N80 Datasheet
FQI4N80
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FQI4N80 Summary of contents
Page 1
... A = 25°C) C Parameter 1 October 2008 QFET = 3 DS(on " " G " " " " FQB4N80 / FQI4N80 Units 800 V 3.9 A 2. 460 mJ 3 4.0 V/ns 3.13 W 130 W 1.04 W/°C -55 to +150 °C 300 °C Typ Max Units -- 0 ...
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... ≤ 3.9A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...
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... C iss 800 600 C oss 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V 0 10 ※ ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...
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... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters 7 Dimensions in Millimeters Rev. A1, Oct 2008 ...
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... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK 8 Dimensions in Millimeters Rev. A1, Oct 2008 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB4N80 / FQI4N80 Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...