FQD16N25C Fairchild Semiconductor, FQD16N25C Datasheet

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FQD16N25C

Manufacturer Part Number
FQD16N25C
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Corporation
FQD16N25C Rev. A1
FQD16N25C
250V N-Channel MOSFET
Features
• 16A, 250V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.27Ω @V
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
D-PAK
FQD Series
Parameter
Parameter
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FQD16N25C
-55 to +150
FQD16N25C
S
D
10.1
± 30
1.28
250
432
160
160
300
5.5
16
64
16
0.78
110
January 2009
QFET
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQD16N25C Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2009 Fairchild Semiconductor Corporation FQD16N25C Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... DD G ≤ 16A, di/dt ≤300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQD16N25C Rev. A1 Package Reel Size D-PAK 380mm D-PAK 380mm T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... C rss Notes : ※ 500 MHz Drain-Source Voltage [V] DS FQD16N25C Rev. A1 Figure 2. Transfer Characteristics ※ Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 1 10 ...

Page 4

... Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited DS(on Notes : - Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FQD16N25C Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 50 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQD16N25C Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQD16N25C Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) FQD16N25C Rev. A1 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQD16N25C Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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