FDB52N20 Fairchild Semiconductor, FDB52N20 Datasheet - Page 3

• Manufacturer Part Number: FDB52N20
• Manufacturer: Fairchild Semiconductor

FDB52N20 Rev. A
Typical Performance Characteristics
10
10
10
10
6000
5000
4000
3000
2000
1000
-1
2
1
0
10
0
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
-1
Figure 1. On-Region Characteristics
Figure 5. Capacitance Characteristics
0
Drain Current and Gate Voltage
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
C
C
C
V
oss
rss
iss
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
50
10
0
I
D
0
, Drain Current [A]
V
GS
75
= 10V
100
C
C
C
iss
oss
rss
V
= C
= C
= C
10
GS
10
* Notes :
gs
1
gd
= 20V
ds
1
1. 250
2. T
* Note : T
+ C
+ C
C
gd
gd
= 25
* Note ;
µ
125
(C
s Pulse Test
1. V
2. f = 1 MHz
J
ds
°
= 25
C
= shorted)
GS
= 0 V
°
C
150
3
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
2
1
0
0.2
Figure 4. Body Diode Forward Voltage
0
2
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.4
10
25
4
°
C
and Temperatue
150
0.6
150
V
V
°
Q
C
GS
SD
G
20
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
25
0.8
6
V
V
V
DS
DS
DS
= 40V
= 100V
= 160V
1.0
30
-55
°
C
8
1.2
40
* Notes :
* Notes :
1. V
2. 250
1.4
* Note : I
1. V
2. 250
GS
DS
µ
10
= 0V
s Pulse Test
µ
= 40V
s Pulse Test
50
D
www.fairchildsemi.com
= 52A
1.6
1.8
60
12