FQD10N20C Fairchild Semiconductor, FQD10N20C Datasheet - Page 4

• Manufacturer Part Number: FQD10N20C
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
2
1
0
10
Figure 9. Maximum Safe Operating Area
-100
Figure 7. Breakdown Voltage Variation
0
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
-50
o
C
o
C
Operation in This Area
is Limited by R
V
T
DS
vs Temperature
J
, Junction Temperature [
1 0
1 0
, Drain-Source Voltage [V]
1 0
0
10
- 1
- 2
1 0
0
1
DS(on)
- 5
0 .0 2
D = 0 .5
0 .0 5
0 .0 1
0 .2
0 .1
(Continued)
50
DC
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
1 0
100
- 4
100 s
s in g le p u ls e
o
C]
10
t
※ Notes :
2
1
1. V
2. I
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-100
8
6
4
2
0
25
※ N o t e s :
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c to r , D = t
3 . T
- 1
P
J M
J C
DM
-50
( t ) = 2 . 5 ℃ / W M a x .
- T
50
C
vs Case Temperature
= P
T
J
T
t
vs Temperature
, Junction Temperature [
D M
1
C
t
0
1 0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
/ t
J C
2
( t )
50
100
1 0
100
1
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 3.9 A
= 10 V
Rev. A2, January 2009
200
150