FQB47P06 Fairchild Semiconductor, FQB47P06 Datasheet - Page 3

• Manufacturer Part Number: FQB47P06
• Manufacturer: Fairchild Semiconductor

FQB47P06/FQI47P06 Rev. A3
Typical Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
8000
7000
6000
5000
4000
3000
2000
1000
10
10
10
0
2
1
0
10
10
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
100
-V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
V
D
10
GS
, Drain Current [A]
C
C
C
0
10
= - 20V
iss
rss
oss
0
V
GS
= - 10V
200
C
C
C
iss
oss
rss
= C
= C
= C
10
300
* Note : T
gs
gd
ds
* Notes :
1
+ C
+ C
1. 250
2. T
10
gd
gd
C
(C
* Notes :
1
= 25
µ
J
1. V
2. f = 1 MHz
ds
s Pulse Test
= 25
= shorted)
o
GS
C
o
C
= 0 V
400
10
10
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
2
1
0
-1
2
1
0
0.0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
175
o
C
0.2
Figure 2. Transfer Characteristics
o
175
10
C
0.4
Variation vs. Source Current
o
C
0.6
20
25
4
-55
-V
-V
o
C
0.8
and Temperature
Q
GS
SD
o
C
G
30
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
1.0
1.2
40
V
DS
1.4
6
V
= -48V
DS
50
1.6
= -30V
1.8
60
2.0
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
* Note : I
8
DS
70
2.2
GS
µ
= -30V
µ
= 0V
s Pulse Test
s Pulse Test
D
2.4
= -47 A
80
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2.6
2.8
10
90