FQD1N80 Fairchild Semiconductor, FQD1N80 Datasheet - Page 4

• Manufacturer Part Number: FQD1N80
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-2
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
10
vs. Temperature
J
DS
, Junction Temperature [
1
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
1 0
0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
DS(on)
o
0 .2
0 .1
50
C
o
C
DC
10
Figure 11. Transient Thermal Response Curve
2
10 ms
100
1 0
(Continued)
1 ms
o
- 4
C]
s i n g l e p u ls e
100μ s
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 μ A
150
= 0 V
10
3
1 0
- 3
200
1 0
- 2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
1 . Z
2 . D u ty F a c to r , D = t
3 . T
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
θ
J M
- 1
P
J C
- T
-50
DM
( t) = 2 .7 8 ℃ /W M a x .
50
C
= P
vs. Case Temperature
T
D M
vs. Temperature
T
J
t
, Junction Temperature [
1
C
* Z
t
1 0
0
, Case Temperature [ ℃ ]
2
1
θ J C
/t
0
75
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.5 A
= 10 V
Rev. A3. January 2009
200
150