FQD8P10 Fairchild Semiconductor, FQD8P10 Datasheet

no-image

FQD8P10

Manufacturer Part Number
FQD8P10
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD8P10
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FQD8P10
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FQD8P10TF
Manufacturer:
ADVANTECH
Quantity:
776
Part Number:
FQD8P10TM
Manufacturer:
FAIRCHILD
Quantity:
8 000
Company:
Part Number:
FQD8P10TM-F085
Quantity:
5 000
Part Number:
FQD8P10TM_F085
Manufacturer:
FAIRCHILD
Quantity:
5 000
©2002 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
C
C
C
= 25°C unless otherwise noted
D
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -6.6A, -100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
I-PAK
FQU Series
FQD8P10 / FQU8P10
Typ
--
--
--
DS(on)
-55 to +150
= 0.53
-26.4
-100
0.35
-6.6
-4.2
150
-6.6
-6.0
300
4.4
2.5
44
G
30
@V
Max
2.84
110
50
QFET
GS
D
S
= -10 V
Rev. B, August 2002
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

Related parts for FQD8P10

FQD8P10 Summary of contents

Page 1

... 25°C unless otherwise noted C Parameter = 25° 100°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° 25°C) C Parameter QFET = 0. -10 V DS(on FQD8P10 / FQU8P10 Units -100 V -6.6 A -4.2 A -26 150 mJ -6.6 A 4.4 mJ -6.0 V/ns 2 0.35 W/°C -55 to +150 °C 300 °C ...

Page 2

... ≤ -8.0A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25°C ...

Page 3

... C iss 600 500 400 C rss 300 200 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = -250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT ...

Page 7

... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation D - PAK Dimensions in Millimeters m Rev. B, August 2002 ...

Page 8

... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters i Rev. B, August 2002 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

Related keywords