IFS100S12N3T4_B11 Infineon Technologies, IFS100S12N3T4_B11 Datasheet

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IFS100S12N3T4_B11

Manufacturer Part Number
IFS100S12N3T4_B11
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of IFS100S12N3T4_B11

Packages
AG-MIPAQ-2
Ic (max)
100.0 A
Vce(sat) (typ)
1.75 V
Configuration
sixpack
Technology
IGBT4
Housing
EconoPACK¬ô 3
IGBT-Module
IGBT-modules
MIPAQ™ sense Modul in Sixpack-Konfiguration mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommess-
widerstand mit integriertem / -Wandler und galvanisch getrennter digitalen Schnittstelle
MIPAQ™ sense module in Sixpack-configuration with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
with integrated
Topologie
topology
Halbleiter-Nenndaten
rated semiconductor data
Art der Belastung
load type
Zielanwendung
target application
Sensoren
sensors
Digitale Schnittstelle
digital interface
Normen
standards
prepared by: US
approved by: MH
Technische Information / technical information
Kenndaten
key data
Blockschaltbild
block diagram
Foto
photo
-converter and galvanical isolation of the digital interface
B6I
1200V, 100A
ohmsch-induktiv
resistive-inductive
Industrieantriebe, USV, Klimatisierungsgeräte, Solarumrichter
industrial drives, UPS, Air conditioning, Solar inverters
Strommesswiderstände für Laststrom, NTC für
Bodenplattentemperatur
shunts for output current, NTC for baseplate temperature
5V-CMOS, galvanische Trennung nach IEC61800-5-1
5V-CMOS, galvanic isolation according to IEC61800-5-1
IEC61800-5-1 (Overvoltage Category III, Polution Degree 2,
Insulating Material Groupe II), UL94, RoHs
date of publication: 16.08.2011
revision: 2.1
IFS100S12N3T4_B11
1(13)
DB_IFS100S12N3T4_B11_2V1_2011-08-16

IFS100S12N3T4_B11 Summary of contents

Page 1

... Digitale Schnittstelle 5V-CMOS, galvanische Trennung nach IEC61800-5-1 digital interface 5V-CMOS, galvanic isolation according to IEC61800-5-1 Normen IEC61800-5-1 (Overvoltage Category III, Polution Degree 2, standards Insulating Material Groupe II), UL94, RoHs Blockschaltbild block diagram Foto photo prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 1(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 2

... A 200 A 455 W +/-20 V min. typ. max. 1,75 2,10 V 2,05 V 2,10 V 5,2 5,8 6,4 V 0,80 µC 7,5 6,30 nF 0,27 nF 1,0 mA 100 nA 0,157 µs 0,17 µs 0,175 µs 0,036 µs 0,044 µs 0,047 µs 0,330 µs 0,418 µs 0,444 µs 0,113 µs 0,190 µs 0,222 µs 6,49 mJ 10,2 mJ 11,89 mJ 6,35 mJ 9,55 mJ 10,61 mJ 360 A 0,33 K/W 0,086 K/W DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 3

... R thCH = 1 W/(m*K) grease < 200° vjop R thJC 3(13) Zieldaten Target Data 1200 V 100 A 200 A 1550 A²s 1500 A²s 273 W min. typ. max. 1,70 2,15 V 1,65 V 1,65 V 121 A 132 A 140 A 8,5 µC 15,9 µC 18,0 µC 4,8 mJ 6,9 mJ 7,7 mJ 0,55 K/W 0,15 K/W min. typ. max. 1,485 1,50 1,515 m < 30 ppm/K 200 °C 8,7 K/W DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 4

... CC´+EE´ max stg M G 4(13) min. typ. max. 5, 20,0 mW 3375 K 3411 K 3433 K min. typ. max. 2 7,5 mm > 200 min. typ. max. 0,011 K 1,2 m 175 °C -40 150 °C -40 125 °C -40 125 °C 3,00 - 6,00 Nm 316 g DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 5

... THD = [-133,3A; +133,3A], f 1kHz 5(13) Zieldaten Target Data min. typ. max. 30,0 kHz 1420 V 2500 V 50 kV/µs 6000 V 6000 -213,3 - +213,3 A -133,3 - +133 49,6 50,0 50 100 0,0 % -1, 0,4 % PDM 1) % 0,09 - 0,135 PDM 1) % 0,116 - 0,15 PDM 10 12 bit DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 6

... SDS SDH t CLK t CLKRT t CLKFT t SDRT t SDFT t CLKpulses 6(13) Zieldaten Target Data min. typ. max. 4,75 5,00 5,25 V 4,5 5,0 5 4,3 4,4 V 3,9 4,1 V 0,1 0,2 V 4,0 4,3 V 3,5 3,7 V 0,2 0,3 V min. typ. max. 0,12 0,26 V 4,48 4,8 V -22 mA 14,5 mA 1,16 ns 1,16 ns 0,17 0,26 V 3,98 4,3 V -22 mA 14,5 mA 1,16 ns 1,16 ns 9,3 10,0 10,5 MHz 1,3 4,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 250 ns DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 7

... prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data typisch typisch 0,16 0,16 0,14 0,14 0,12 0,12 0,1 0,1 0,08 0,08 deltaPDM [%] deltaPDM [%] 0,06 0,06 0,04 0,04 0,02 0, 4,5 4,5 4,75 4, [V] [V] CC1 CC1 7(13) 5,25 5,25 5,5 5,5 DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 8

... SNR [dB] SNR [dB 71,5 71 70,5 70,5 -60 -40 -20 -60 -40 - 100 120 140 160 100 120 140 160 typisch typisch fCLK [MHz -60 -40 - 100 120 140 160 8(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 9

... Zieldaten Target Data 2,5 2 3,5 3 4,5 4 [V] [ [A] C Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150° DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 10

... V V [V] [ Tvj = 25°C Tvj = 25°C Tvj = 125°C Tvj = 125°C Tvj = 150°C Tvj = 150° 2 100 120 140 160 180 200 10(13) 800 800 1000 1000 1200 1200 1400 1400 [A] DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 11

... prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 11(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 12

... Technische Information / technical information IGBT-Module IFS100S12N3T4_B11 IGBT-Modules Schaltplan / circuit diagram Gehäuseabmessungen / package outline Infineon Infineon prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 12(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

Page 13

... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 13(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...

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