IFS150V12PT4 Infineon Technologies, IFS150V12PT4 Datasheet - Page 5

• Manufacturer Part Number: IFS150V12PT4
• Manufacturer: Infineon Technologies

Specifications of IFS150V12PT4

• Packages: AG-MIPAQ-3
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 4

MIPAQ™serve
prepared by: Marco Bohlländer
approved by: Martin Schulz
Switching losses IGBT
E
U
Output characteristic IGBT
I
on
GSPx
C
Forward characteristic diode
I
F
= f(U
= f(I
= f(U
300
270
240
210
180
150
120
40
35
30
25
20
15
10
300
270
240
210
180
150
120
90
60
30
5
0
= 16V, U
90
60
30
0
0
0
C
0
), E
CE
0
F
)
) @ U
off
- - -
_____
- - -
_____
0,2 0,4 0,6 0,8
- - -
_____
GSNx
= f(I
50
0,5
GSPx
E
T
E
T
C
v j
T
of f
= -8V, T
v j
T
on
)
v j
= 150°C
v j
= 25°C
= 150°C
= 16V
= 25°C
100
1
vj
= 150°C
U
1
IFS150V12PT4
CE
1,5
I
C
U
150
[A]
1,2 1,4 1,6 1,8
F
[V]
[V]
2
200
date of publication: 08.06.2010
revision: 2.0
2,5
250
2
2,2 2,4
3
300
1000
Switching losses diode
E
900
800
700
600
500
400
300
200
100
Digital temperature output
Number of pulses within 100ms
Output characteristic IGBT
I
rec
C
0
18
16
14
12
10
-40 -30 -20 -1 0
= f(U
8
6
4
2
0
300
270
240
210
180
150
120
= f(I
90
60
30
0
0
0
F
CE
) @ U
30
____
) @ T
……..
- - -
_____
0,5
CE
E
60
rec
vj
U
= 600V, T
1
U
0
U
= 150°C
GSPx
GSPx
GSPx
90
1 0
1,5
= 16V
= 18V
= 14V
20
120
2
vj
30
T
U
= 150°C
I
NTC
F
CE
2,5
150
40
[A]
[V]
[°C]
50
180
3
preliminary data
60
3,5
210
70
80
4
240
90
4,5
1 00 1 1 0 1 20
270
5
300