T640N Infineon Technologies, T640N Datasheet - Page 8

• Manufacturer Part Number: T640N
• Manufacturer: Infineon Technologies

Specifications of T640N

• Vdrm/ Vrrm (v): 1,200.0 - 1,800.0 V
• Itsm: 8,000.0 A
• Itavm: 644 (180 ° el sin)
• Housing: Disc dia 48mm height 14mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2010-01-13, H.Sandmann
N
Phase Control Thyristor
100
0,1
10
1
10000
1000
10
Netz-Thyristor
100
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlassstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
Zündverzug
G
, v
G
= f (i
= f (i
R
T640N
b - 40W / 1ms
≤ 0,5 V
G
A 01/10
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
10
RRM
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
= f(di/dt)
TM
D
D
-di/dt [A/µs]
= 12 V
= 12 V
Seite/page
a
GM
= f (t
b
g
) :
100
c
10000
1000A
8/10
500A
200A
100A
i
TM
50A
20A
=