T2180N Infineon Technologies, T2180N Datasheet

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T2180N

Manufacturer Part Number
T2180N
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of T2180N

Vdrm/ Vrrm (v)
1,200.0 - 1,800.0 V
Itsm
36,000.0 A
Itavm
2180 (180 ° el sin)
Housing
Disc dia 100mm height 26mm / Ceramic
Configuration
Phase Control Thyristors / SCR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
T2180N18TOF
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
N
Phase Control Thyristor
IFBIP D AEC / 2009-03-12, H.Sandmann
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Zündverzug
gate controlled delay time
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
on-state characteristic
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
approved by: M.Leifeld
prepared by: H.Sandmann
v
Netz-Thyristor
enndaten
T
A
B
i
T
500A ≤ i
C
ln
T
i (
≤ 10500 A
T
Datenblatt / Data sheet
Elektrische Eigenschaften
1)
D
i
T
A 11/09
T2180N
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, i
T
5.Kennbuchstabe / 5
T
T
T
T
T
T
T
T
T
T
T
T
i
T
v
DIN IEC 60747-6
T
GM
D
vj
vj
vj
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
date of publication:
= V
= 25 °C, i
= -40°C... T
= -40°C... T
= +25°C... T
= 85 °C
= 55 °C, θ = 180°sin, t
= 25 °C °C, t
= T
= 25 °C, t
= T
= T
= T
= T
= T
= T
= T
= 25 °C, v
= 25 °C, v
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= 1 A, di
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, v
, t
, t
, v
GM
, i
, i
, v
, v
, v
G
R
revision:
GM
P
P
D
D
P
D
T
T
/dt = 1 A/µs, t
D
D
D
D
D
= V
= 1 A, di
= 10 ms
= 10 ms
= 10 ms
= 12V
= 12V, R
= 8 kA
= 2 kA
= 0,67 V
vj max
vj max
= 12V
= 12V
= 1 A, di
vj max
= 12V
= 0,5 V
= 0,5 V
P
RRM
= 10 ms
th
G
letter F
DRM
DRM
GK
DRM
/dt = 1 A/µs
G
2009-03-12
/dt = 1 A/µs
P
≥ 10 Ω
g
= 10 ms
= 20 µs
2.0
V
V
V
I
I
I
I
I
I²t
(di
(dv
v
V
r
I
V
I
V
I
I
i
t
D
TRMSM
TAVM
TAVM
TRMS
TSM
GT
GD
H
L
gd
T
T
DRM
DSM
RSM
(TO)
GT
GD
, i
T
D
R
/dt)
/dt)
,V
cr
RRM
cr
C=
D=
A=
B=
1200
1400
1200
1400
1300
1500
Seite/page
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
-3,932E-03
8,097E-01
7,834E-05
3,960E-03
44000
38000
0,106 mΩ
1600
1800
1600
1800
1700
1900
4460 A
2180 A
3220 A
5050 A
9680
7220
1000 V/µs
1500 mA
1,75
1,11
0,90 V
0,25 V
200 A/µs
250 mA
300 mA
250 mA
10
2 V
5
4 µs
V
V
V
V
V
V
A
A
10³ A²s
10³ A²s
V
V
mA
mA
1/10

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T2180N Summary of contents

Page 1

... Haltestrom holding current Einraststrom latching current Vorwärts- und Rückwärts-Sperrstrom forward off-state and reverse current Zündverzug gate controlled delay time prepared by: H.Sandmann approved by: M.Leifeld IFBIP D AEC / 2009-03-12, H.Sandmann T2180N T = -40°C... max Elektrische Eigenschaften T = -40°C... max T = +25°C... T ...

Page 2

... Gehäuse, siehe Anlage case, see annex Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force Steueranschlüsse control terminals Gewicht weight Kriechstrecke creepage distance Schwingfestigkeit vibration resistance IFBIP D AEC / 2009-03-12, H.Sandmann T2180N max TM TAVM v = 100 0, DRM dv / V/µ ...

Page 3

... N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor Massbild 1 IFBIP D AEC / 2009-03-12, H.Sandmann T2180N 11/09 1: Anode / Anode 2: Kathode / Cathode 4: Gate 5: Hilfskathode/ Auxiliary Cathode Seite/page 3/10 ...

Page 4

... Analytische Funktion / Analytical function: 0,030 0,025 0,020 0,015 0,010 0,005 0,000 0,001 0,01 Transienter innerer Wärmewiderstand fü Transient thermal impedance for DC IFBIP D AEC / 2009-03-12, H.Sandmann T2180N 0,00003 0,00057 0,00091 0,00029 0,00298 0,01350 0,00004 0,0006 0,00105 0,00029 0,0023 0,02400 ...

Page 5

... Grenzdurchlasskennlinie / Limiting on-state characteristic i IFBIP D AEC / 2009-03-12, H.Sandmann T2180N Durchlasskennlinie ∆Z / ∆Z th Θ rec th Θ sin Θ = 180° Θ = 120° 0,00105 0,00170 0,00080 0,00112 0,00098 0,00166 0,00064 0,00096 ...

Page 6

... Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T Parameter: Stromflusswinkel Θ / Current conduction angle Θ IFBIP D AEC / 2009-03-12, H.Sandmann T2180N Durchlassverluste 180° 60° θ = 30° 1000 1500 I [A] TAV Sinusförmiger Strom / Sinusoidal current θ = 30° ...

Page 7

... Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T Parameter: Stromflusswinkel Θ / Current conduction angle Θ IFBIP D AEC / 2009-03-12, H.Sandmann T2180N Tc 180° 120° 90° 60° θ = 30° 1500 2000 2500 I [A] TAV Rechteckförmiger Strom / Rectangular current θ ...

Page 8

... Steuercharakteristik v Gate characteristic v Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P 100000 10000 1000 1 Sperrverzögerungsladung / Recovered charge Q IFBIP D AEC / 2009-03-12, H.Sandmann T2180N Steuerkennlinie i [mA] 100 mit Zündbereichen fü with triggering area for Zü ...

Page 9

... Typische Abhängigkeit des Grenzstromes I Halbwellen bei 50Hz. Parameter: Rückwärtsspannung V Typical dependency of maximum overload on-state current I sinusoidal half waves at 50Hz. Parameter: peak reverse voltage V IFBIP D AEC / 2009-03-12, H.Sandmann T2180N Anzahl Pulse bei 50Hz Sinus Halbwellen Number of pulses for 50Hz sinusoidal half waves von der Anzahl fü ...

Page 10

... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. IFBIP D AEC / 2009-03-12, H.Sandmann T2180N A 11/09 Seite/page 10/10 ...

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