T571N Infineon Technologies, T571N Datasheet

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T571N

Manufacturer Part Number
T571N
Description
Manufacturer
Infineon Technologies
Datasheet
1.T571N.pdf (8 pages)

Specifications of T571N

Vdrm/ Vrrm (v)
6,000.0 - 6,500.0 V
Itsm
9,400.0 A
Itavm
540 (180 ° el sin)
Housing
Dia 75mm height 26mm / Ceramic
Configuration
Phase Control Thyristors / SCR Diode Discs
BIP PPE4 / 27.10.05, M.Droldner
N
Phase Control Thyristor
Gehäusegrenzstrom nicht spezifiziert / case non rupture current not specified
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Zündverzug
gate controlled delay time
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
approved by: J.Przybilla
prepared by: M.Droldner
Netz-Thyristor
Kenndaten
v
T
A
B
i
T
C
Ln
i (
Datenblatt / Data sheet
T
Elektrische Eigenschaften
) 1
D
i
T
T571N
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, i
T
5.Kennbuchstabe / 5
T
T
T
T
T
T
T
T
T
T
T
v
DIN IEC 60747-6
T
T
i
GM
D
vj
vj
vj
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= V
= 25 °C,i
= +25°C... T
= +25°C... T
= +25°C... T
= 85 °C
= 60 °C
= 25 °C, t
= T
= 25 °C, t
= T
= T
= T
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= T
= T
= 25°C, v
= T
= 25°C, v
= 1 A, di
date of publication:
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, v
, t
, t
, v
GM
, i
, v
, v
, v
GM
R
D
D
D
G
P
P
D
TM
P
P
D
D
D
D
/dt = 1 A/µs, t
= V
= 3 A, di
= 10 ms
= 10 ms
= 12 V
= 12 V
= 12 V
= 1 A, di
= 10 ms
= 10 ms
= 0,67 V
= 12 V, R
vj max
vj max
vj max
= 12 V
= 0,5 V
= 0,5 V
= 1 kA
revision:
RRM
th
G
letter F
DRM
DRM
G
DRM
/dt = 6 A/µs
/dt = 1 A/µs
GK
≥ 10 Ω
g
27.10.05
= 20 µs
1
V
V
V
I
I
I
I²t
(di
(dv
v
V
r
I
V
I
V
I
I
i
t
D
TRMSM
TAVM
TSM
GT
GD
H
L
gd
T
T
DRM
DSM
RSM
(TO)
GT
GD
, i
T
D
R
/dt)
/dt)
,V
cr
RRM
cr
C=
D=
A=
B=
Vorläufige Daten
Preliminary data
Seite/page
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
-3,296E-01
-5,275E-02
1,724E-03
4,376E-01
10500
6500 V
6600 V
6600 V
1150 A
9400
1000 V/µs
3000 mA
2,75 V
1,35 V
540
730
551
442
150 A/µs
350 mA
350 mA
400 mA
1,4 mΩ
2,5 V
0,4 V
2,5 µs
20
10
A
A
A
A
10³ A²s
10³ A²s
mA
mA
1/8

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T571N Summary of contents

Page 1

... Vorwärts- und Rückwärts-Sperrstrom forward off-state and reverse current Zündverzug gate controlled delay time Gehäusegrenzstrom nicht spezifiziert / case non rupture current not specified prepared by: M.Droldner approved by: J.Przybilla BIP PPE4 / 27.10.05, M.Droldner T571N T = +25°C... max Elektrische Eigenschaften T = +25°C... T ...

Page 2

... Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This data sheet specifies semiconductor devices, but promises no characteristics valid in combination with the belonging technical notes. BIP PPE4 / 27.10.05, M.Droldner T571N 1000A ...

Page 3

... N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor Maßbild 1 BIP PPE4 / 27.10.05, M.Droldner T571N 1: Anode/Anode Kathode/Cathode 2 3: Gate 4: Hilfskathode/ Vorläufige Daten Preliminary data Cathode (control terminal) Seite/page 3/8 ...

Page 4

... R [°C/W] thn kathodenseitig cathode-sided τ [s] n Analytische Funktion / Analytical function: 0,001 0,01 Transienter innerer Wärmewiderstand für DC/ Transient thermal impedance Z BIP PPE4 / 27.10.05, M.Droldner T571N max 0,00113 0,0021 0,00229 thJC thn n=1 0,00189 0,0065 0,00456 0,00127 ...

Page 5

... N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor 3000 Durchlasskennlinie Diagramme Trans. Wärmewid. beidseitig 2500 2000 1500 1000 500 0 0,0 1,0 Grenzdurchlaßkennlinie / Limiting on-state characteristic i BIP PPE4 / 27.10.05, M.Droldner T571N 2,0 3,0 4 max Vorläufige Daten Preliminary data 5,0 6 Seite/page 5/8 ...

Page 6

... Phase Control Thyristor 10 Steuercharakteristik 1 0,1 10 Zündverzug Steuercharakteristik v Gate characteristic v Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P 1000 100 10 1 0,1 10 BIP PPE4 / 27.10.05, M.Droldner T571N i [mA] 100 mit Zündbereichen fü with triggering area for W/10ms W/1ms b i ...

Page 7

... Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor 10000 Sperrverzögerungsladung 1000 1 Sperrverzögerungsladung / Recovered charge Q Rückstromspitze 1000 100 10 1 Rückstromspitze / Peak recovery current I BIP PPE4 / 27.10.05, M.Droldner T571N 3000V vj vjmax R R=83Ohm; C=0,44µF Parameter: Durchlaßstrom / On-state current 3000V vj ...

Page 8

... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. BIP PPE4 / 27.10.05, M.Droldner T571N Vorläufige Daten Preliminary data Seite/page 8/8 ...

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