BTS 432E2 E3062A Infineon Technologies, BTS 432E2 E3062A Datasheet - Page 2

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BTS 432E2 E3062A

Manufacturer Part Number
BTS 432E2 E3062A
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 432E2 E3062A

Packages
PG-TO263-5
Channels
1.0
Ron @ Tj = 25°c
38.0 mOhm
Recommended Operating Voltage Min.
4.5 V
Recommended Operating Voltage Max.
42.0 V
Il(sc)
24.0 A
Maximum Ratings at T
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection V
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
Electrostatic discharge capability (ESD)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
Thermal resistance
3)
4
Data Sheet
)
1
2
3
4
5
R
single pulse
(Human Body Model)
Pin
I
= 2 Ω, R
V
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
S
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
L
= 1.1 Ω, t
Symbol
GND
IN
V bb
ST
OUT
(Load, L)
d
= 200 ms, IN= low or high
LoadDump
j
= 25 °C unless otherwise specified
SMD version, device on pcb
junction - ambient (free air):
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
= U
A
+ V
s
, U
chip - case:
A
2
T
= 13.5 V
j
=150 °C: E
2
(one layer, 70µm thick) copper area for V bb
4)
:
V
V
I
T
T
P
V
V
I
I
R
R
Symbol
L
IN
ST
j
stg
s
bb
tot
AS
ESD
IN
thJC
thJA
3
)
PROFET ® BTS 432 E2
-40 ...+150
-55 ...+150
self-limited
Values
-0.5 ... +6
typ. 33
2010-Jan-26
66.5
±5.0
±5.0
≤ 75
125
1.7
2.0
≤ 1
63
Unit
K/W
mA
kV
°C
W
V
V
A
V
J

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