BSS127 Infineon Technologies, BSS127 Datasheet
BSS127
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BSS127 Summary of contents
Page 1
... A I =0.021 =480 /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSS127 600 V 500 Ω 0.021 A PG-SOT-23 Marking SIs Value Unit 0.021 A 0.017 0.09 6 kV/µs ± (<250) 0.50 W -55 ... 150 °C 55/150/56 ...
Page 2
... =150 ° = GSS =4 DS(on) I =0.016 = =0.016 |>2 DS(on)max =0. page 2 BSS127 Values Unit min. typ. max 250 K/W 600 - - V 1.4 2.0 2 0.1 µ 100 nA Ω - 330 600 - 310 500 , 0.007 0.015 ...
Page 3
... plateau =25 ° S,pulse =0.016 =25 ° =300 =0.016 /dt =100 A/µ page 3 BSS127 Values Unit min. typ. max 2 1.0 1.5 - 6.1 19 9.7 14 115 170 - 0.07 0. 0.31 0.5 - 0.65 1 ...
Page 4
... A 4 Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ 100 page 4 BSS127 ≥ 120 T [° 0.5 0.2 0.1 0.05 0.01 single pulse - ...
Page 5
... Typ. forward transconductance g =f 0.025 0.02 0.015 0.01 0.005 0.000 [V] GS page =25 ° 2 3 0.005 0.01 0.015 0.02 I [A] D =25 °C j 0.005 0.010 0.015 I [A] D BSS127 0.025 0.020 2010-05-07 ...
Page 6
... Forward characteristics of reverse diode =25° parameter Ciss Coss -2 10 Crss - [V] DS page µ max typ min - 100 140 T [° 150 °C, 98% 25 °C, 98% 150 °C 25 °C 0 0.4 0.8 1.2 1.6 2 2.4 V [V] SD BSS127 180 2.8 2010-05-07 ...
Page 7
... Gate charge waveforms s(th) Q g(th Rev. 2.01 14 Drain-source breakdown voltage V =f(T BR(DSS) 700 680 660 640 620 300 V 480 V 600 580 560 540 520 500 -60 0.4 0.5 0.6 0.7 0.8 [nC ate page 7 BSS127 ); I =250 µ - 100 140 T [°C] j 180 2010-05-07 ...
Page 8
... Package Outline: Footprint: Rev. 2.01 SOT-23 Packaging: page 8 BSS127 2010-05-07 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.01 page 9 BSS127 2010-05-07 ...