BSD816SN Infineon Technologies, BSD816SN Datasheet
BSD816SN
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BSD816SN Summary of contents
Page 1
... =1 = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSD816SN 20 DS =2.5 V 160 V DS(on),max GS =1.8 V 240 V GS 1.4 PG-SOT363 Marking Lead Free Packing XAs Yes Non dry Value 1 ...
Page 2
... =150 ° GSS DS(on) = |>2 DS(on)max page 2 BSD816SN Values Unit min. typ. max 250 K 0.3 0.55 0.95 μ 100 - - 100 nA - 158 240 mΩ - 112 160 , 4 2011-07-14 ...
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... 2 plateau I S =25 ° S,pulse = =1 =25 ° = =1 /dt =100 A/µ page 3 BSD816SN Values Unit min. typ. max. - 126 180 1.6 - ...
Page 4
... A 4 Max. transient thermal impedance =f(t Z thJA p parameter µs 10 µs 100 µ [V] DS page 4 BSD816SN ≥2 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] ...
Page 5
... V 150 1.5 V 100 1 1 0.6 0.8 1 Typ. forward transconductance =f °C 150 ° [V] GS page 5 BSD816SN ); T =25 ° 1.3 V 1.4 V 1.5 V 1 0.5 1 1.5 2 2.5 [ =25 ° [ 2011-07-14 ...
Page 6
... Forward characteristics of reverse diode =25°C =f parameter Ciss Coss -1 10 Crss - [V] DS page 6 BSD816SN ); =3.7 µ 98% typ 2% - 100 140 T [° °C 150°C, 98% 150 °C 25°C, 98% 0.2 0.4 0.6 0.8 ...
Page 7
... V GS gate parameter 4 °C 2.5 100 °C 2 1.5 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSD816SN ); I =1.4 A pulsed 0.25 0.5 0. [nC] gate 1.25 g ate 2011-07-14 ...
Page 8
... Package Outline: Footprint: Reflow soldering: Dimensions in mm Rev 2.3 SOT363 Packing: page 8 BSD816SN 2011-07-14 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 BSD816SN 2011-07-14 ...