BSD840N Infineon Technologies, BSD840N Datasheet
BSD840N
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BSD840N Summary of contents
Page 1
... =0. = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSD840N 20 =2.5 V 400 V DS(on),max GS =1.8 V 560 V GS 0.88 PG-SOT-363 Lead Free Packing Yes Non dry Value 0.88 0.71 3.5 1.6 6 ±8 ...
Page 2
... =150 ° GSS =0. DS(on =2 =0. |>2 DS(on)max g fs =0. page 2 BSD840N Values Unit min. typ. max 250 K 0.3 0.55 0.75 μ 100 - - 100 nA - 373 560 mΩ - 270 400 , 2 2011-07-14 ...
Page 3
... = =0. 2 plateau I S =25 ° S,pulse = =0. =25 ° = =0. /dt =100 A/µ page 3 BSD840N Values Unit min. typ. max 0.5 A ...
Page 4
... A 4 Max. transient thermal impedance =f(t Z thJA p parameter µs 10 µs 100 µ [V] DS page 4 BSD840N ≥2 120 T [° 0.5 0.2 0.1 0.05 0.01 single pulse - [s] ...
Page 5
... V 200 1.5 V 1.4 V 100 1 0 Typ. forward transconductance =f °C 0 1.5 2.0 2.5 0 [V] GS page 5 BSD840N ); T =25 ° 1.3 V 1.4 V 1.5 V 1.6 V 1.8 V 0.2 0.4 0.6 0.8 [ =25 ° [ 2 2011-07-14 ...
Page 6
... Forward characteristics of reverse diode =25°C =f parameter Ciss 0 10 Coss -1 10 Crss - [V] DS page 6 BSD840N ); =1.6 µ typ 100 140 T [° 150 °C 25 °C 150 °C, 98% 25 °C, 98% 0.4 0.8 1.2 ...
Page 7
... °C 3 100 °C 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSD840N ); I =0.88 A pulsed 0.1 0.2 0.3 0.4 Q [nC] gate 0.5 g ate 2011-07-14 ...
Page 8
... Package Outline: Footprint: Reflow soldering: Dimensions in mm Rev 2.3 SOT-363 Packing: page 8 BSD840N 2011-07-14 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 BSD840N 2011-07-14 ...