BSS169 Infineon Technologies, BSS169 Datasheet - Page 7

• Manufacturer Part Number: BSS169
• Manufacturer: Infineon Technologies

Specifications of BSS169

• Package: SOT-23
• Vds (max): 100.0 V
• Id (max): 0.17 A
• Idpuls (max): 0.68 A
• Rds (on) (max) (@10v): 6.0 Ohm

Rev. 1.8
Rev. 1.8
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
10
10
10
10
10
10
10
10
10
120
100
80
SD
-1
-1
-2
-2
-3
-3
-4
-4
0
0
=f(T
-60
)
0
0
j
); I
j
-20
D
=250 µA
0.5
0.5
150 °C
150 °C
20
V
V
T
SD
SD
j
60
[°C]
[V]
[V]
25 °C
25 °C
150 °C, 98%
150 °C, 98%
100
1
1
140
25 °C, 98%
25 °C, 98%
180
1.5
1.5
page 7
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-2
-2
-4
-4
8
8
6
6
4
4
2
2
0
0
gate
0
0
); I
DD
D
=0.12 A pulsed
0.5
0.5
1
1
Q
Q
0.2 VDS(max)
0.2 VDS(max)
gate
gate
[nC]
[nC]
1.5
1.5
0.8 VDS(max)
0.8 VDS(max)
0.5 VDS(max)
0.5 VDS(max)
2
2
BSS169
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2.5
2.5