BSR315P Infineon Technologies, BSR315P Datasheet - Page 6
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BSR315P
Manufacturer Part Number
BSR315P
Description
Manufacturer
Infineon Technologies
Datasheet
1.BSR315P.pdf
(9 pages)
Specifications of BSR315P
Package
SC59
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
800.0 mOhm
Rds (on) (max) (@4.5v)
1,300.0 mOhm
Rds (on) (max) (@2.5v)
-
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Rev 1.05
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
1.4
1.2
0.8
0.6
0.4
0.2
10
10
10
1
0
DS
=f(T
-60
3
2
1
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=-0.62 A; V
typ.
20
20
T
-V
GS
j
DS
[°C]
=-10 V
98 %
Ciss
Coss
60
Crss
[V]
40
100
140
60
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
2.5
1.5
0.5
=f(T
SD
-1
-2
2
1
0
1
0
-60
)
0
j
); V
j
GS
-20
=V
DS
150 °C, typ
0.5
; I
20
D
=-160 µA
-V
T
j
min.
SD
[°C]
typ.
max.
60
[V]
25 °C, 98%
150 °C, 98%
1
100
25 °C, typ
BSR315P
2012-03-15
140
1.5