BSS314PE Infineon Technologies, BSS314PE Datasheet
BSS314PE
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BSS314PE Summary of contents
Page 1
... =-1 =- /dt di /dt =-200A/µs, T =150 °C j,max =25 °C tot stg JESD22-A114 -HBM page 1 BSS314PE DS V =-10 V 140 DS(on),max GS V =-4.5 V 230 GS -1.5 PG-SOT- Marking Lead Free Packing Yes Non dry YGs Value -1.5 -1.2 -6.1 ...
Page 2
... V =-30V =150 ° =-20V, V GSS =-4.5V DS(on) I =-1. =-10V, I =-1. |>2 DS(on)max =-1 page 2 BSS314PE Values min. typ. max 250 - -1 =0V -100 = 153 230 - 107 140 , 3 Unit K μA ...
Page 3
... - plateau =25 ° S,pulse =-1.5A =25 ° =- =-1.5A /dt =100 A/µ page 3 BSS314PE Values Unit min. typ. max. - 221 294 pF - 126 168 - ...
Page 4
... µs 10 µs 100 µ [V] page 4 ≤- 100 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] BSS314PE 140 160 2011-12-05 ...
Page 5
... [V] 8 Typ. forward transconductance g =f ° [V] page =25 ° 3 [A] D =25 ° [A] D BSS314PE 2011-12-05 ...
Page 6
... Forward characteristics of reverse diode =25° parameter Ciss Coss Crss - [V] page =-6.3 µ typ 2 % -60 - 100 T [° °C 150 °C 25 °C, 98% 0 0.2 0.4 0.6 0.8 1 1.2 V [V] SD BSS314PE 140 180 150 °C, 98% 1.4 1.6 1.8 2011-12-05 ...
Page 7
... Typ. gate charge V =f(Q GS parameter °C 100 °C 4 125 ° Gate charge waveforms V V gs(th) Q g(th) 60 100 140 page =-1.5 A pulsed gate [nC] gate BSS314PE gate 2011-12-05 ...
Page 8
... Package Outline: Footprint: Rev 2.2 SOT-23 Packaging: page 8 BSS314PE 2011-12-05 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 BSS314PE 2011-12-05 ...