BSV236SP Infineon Technologies, BSV236SP Datasheet - Page 6

• Manufacturer Part Number: BSV236SP
• Manufacturer: Infineon Technologies

Specifications of BSV236SP

• Package: SOT-363
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 175.0 mOhm
• Rds (on) (max) (@2.5v): 285.0 mOhm

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m
Rev 1.5
pF
10
10
10
240
200
180
160
140
120
100
80
-60
3
2
1
0
DS
= f(T j )
)
D
-20
GS
= -1.5 A, V
5
=0, f=1 MHz
20
Ciss
Coss
Crss
10
98%
typ.
GS
60
= -4.5 V
100
V
Page 6
°C
T
- V
j
DS
160
20
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
1.4
V
0.8
0.6
0.4
0.2
A
-1
-2
1
-60
1
0
0
= f (T j )
SD
BSV 236SP
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
DS
1.2
T
T
T
T
j
j
j
j
2%
, I
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
typ.
98%
D
1.6
60
= -8 µA
2
BSV 236SP
100
2011-07-14
2.4
°C
V
V
T
SD
j
160
3