SIGC42T60UN Infineon Technologies, SIGC42T60UN Datasheet - Page 2

• Manufacturer Part Number: SIGC42T60UN
• Manufacturer: Infineon Technologies

Specifications of SIGC42T60UN

• Technology: High Speed IGBT 2
• Vds (max): 600.0 V
• Ic (max): 50.0 A
• Vce(sat) (max): 3.15 V
• Vge(th) (min): 3.0 V

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
* V
Edited by INFINEON Technologies AIM PMD D CID CLS, L 7272U, Edition 1, 13. 09.2005
depending on thermal properties of assembly
alues also influenced by parasitic L- and C- in measurement and package.
p
limited by T
jmax
jmax
V
V
V
I
I
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
C
V
j
C E
G E
C C
G E
G
= 1 5 0 C
V
=50A
I
V
V
C
CE
= 6 . 8
CE
GE
=1mA, V
GE
= 2 5 V
= 0 V
=+15/0V
=400V
Conditions*
Conditions
=600V, V
Conditions
=0V, V
=15V, I
V
I
I
V
T
=0V, I
C
c p u l s
j
CE
G E
, T
Symbol
s t g
C
GE
GE
C
=2mA
=50A
GE
=20V
=V
=0V
SIGC42T60UN
CE
min.
min.
min.
600
-55 ... +150
3
-
-
-
-
-
-
-
Value
600
150
1 )
20
Value
Value
typ.
Value
typ.
2572
typ.
245
158
350
2.8
48
31
20
4
max.
max.
max.
3.15
120
40
5
Unit
°C
Unit
pF
Unit
ns
V
A
A
V
Unit
µA
nA
V