SIGC121T120R2CL Infineon Technologies, SIGC121T120R2CL Datasheet
SIGC121T120R2CL
Specifications of SIGC121T120R2CL
Related parts for SIGC121T120R2CL
SIGC121T120R2CL Summary of contents
Page 1
... NPT technology 180µm chip low turn-off losses positive temperature coefficient easy paralleling integrated gate resistor Chip Type V CE SIGC121T120R2CL 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer ...
Page 2
... SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies HV3, L 7171-P, Edition 2, 03.09.2003 SIGC121T120R2CL Symbol jmax C I jmax ...
Page 3
... CHIP DRAWING: Edited by INFINEON Technologies HV3, L 7171-P, Edition 2, 03.09.2003 SIGC121T120R2CL ...
Page 4
... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L 7171-P, Edition 2, 03.09.2003 SIGC121T120R2CL BSM75GD120DLC Package Econopack 3 ...