ESD1P0RFS Infineon Technologies, ESD1P0RFS Datasheet - Page 2

• Manufacturer Part Number: ESD1P0RFS
• Manufacturer: Infineon Technologies

Specifications of ESD1P0RFS

• Packages: SOT363
• Vesd(min)(iec61000-4-2 Contact): 25.0 kV
• Vrwm: 70.0 V
• Ct, Cl @ 0v: 1.0 pF
• Ir (typ): 100.0 nA
• Ipp @ Tp=8/20µs: 10.0 A

Maximum Ratings at T
Parameter
ESD contact discharge
Peak pulse current (t
Operating temperature range
Storage temperature
Electrical Characteristics at T
Parameter
Characteristics -
Reverse working voltage
Reverse current
V
Forward clamping voltage
I
I
Line capacitance
V
V
Series inductance (per diode)
SOT323
SOT363
1
Please refer to the application examples.
2
Please refer to the application examples.
3
4
PP
PP
V ESD according to IEC61000-4-2, only valid in anti-parallel or rail-to-rail connection.
I pp according to IEC61000-4-5, only valid in anti-parallel or rail-to-rail connection.
Only valid in rail-to-rail configuration V
Total capacitance line to ground (2 diodes in parallel)
R
R
R
= 70 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz, for Application example 4
= 3 A, t
= 10 A, t
p
p
= 8/20 µs
= 8/20 µs
4)
p
= 8 / 20 µs)
1)
A
3)
= 25°C, unless otherwise specified
2)
A
CC
= 25°C, unless otherwise specified
2)
≥ V
RWM
2
Symbol
V
I
T
T
Symbol
V
I
V
C
L
pp
R
op
stg
S
ESD
RWM
FC
T
min.
-
-
-
-
-
-
-
-
-55...150
-65...150
Values
Value
typ.
0.5
1.4
1.6
20
10
12
1
4
-
-
ESD1P0RF...
max.
0.75
100
1.5
70
15
2011-07-20
7
-
-
Unit
kV
A
°C
Unit
V
nA
V
pF
nH