BFP740ESD Infineon Technologies, BFP740ESD Datasheet - Page 8

• Manufacturer Part Number: BFP740ESD
• Manufacturer: Infineon Technologies

Specifications of BFP740ESD

• Packages: SOT343
• Vceo (max): 4.2 V
• Ic(max): 35.0 mA
• Nfmin (typ): 0.6 dB
• Gmax (typ): 27.0 dB
• Oip3: 25.0 dBm

2
The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection
circuits, which enhance robustness against ESD and high RF input power strongly. The device combines
robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of
wireless applications.
The BFP740ESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.2 V.
Table 1
Parameter
Collector emitter breakdown voltage
Collector base leakage current
DC current gain
Collector current
Total power dissipation
Data Sheet
Product Brief
Quick Reference DC Characteristics at
Symbol
V
I
h
I
P
CBO
C
FE
(BR)CEO
tot
Min.
4.2
–
160
–
–
T
8
A
= 25°C
Typ.
4.7
–
250
–
–
Values
Max.
–
400
400
45
160
Unit
V
nA
mA
mW
Note / Test Condition
I
Open base
V
Open emitter
V
T
Revision 1.0, 2010-06-29
C
S
CB
CE
= 1 mA,
≤ 98 °C
= 2 V,
= 3 V,
BFP740ESD
I
I
Product Brief
I
E
C
B
= 0
= 25 mA
= 0