BGM1032N7 Infineon Technologies, BGM1032N7 Datasheet - Page 7

• Manufacturer Part Number: BGM1032N7
• Manufacturer: Infineon Technologies

Specifications of BGM1032N7

• Packages: TSNP-7-10
• I (typ): 4.0 mA
• Gain (typ): 14.8 dB
• Nfmin (typ): 1.65 dB
• P-1db (in): -6 dBm
• Frequency (f): 1550 – 1615 MHz

2
2.1
Table 1
Parameter
Voltage at pin PON to GND
Voltage at pin VCC to GND
Voltage at pin RFIN to GND
Voltage at pin SO to GND
Voltage at pin AI to GND
Voltage at pin RFOUT to GND
Current into pin VCC
RF input power inband
RF input power out of band
Total power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
Symbol
V
V
V
V
V
V
I
P
P
P
T
T
T
VCC
j
A
stg
PON
CC
RFIN
BO
AI
RFOUT
IN
IN,OBB
tot
Min.
-0.3
-0.3
-3
-3
-0.3
-0.3
–
–
–
–
–
-40
-65
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
Values
7
GPS and GLONASS Front-End Module
Max.
3.6
3.6
3
3
0.75
V
25
0
25
90
150
85
150
CC
+
0.3 V
Unit
V
V
V
V
V
mA
dBm
dBm
mW
°C
°C
°C
Note / Test Condition
–
–
–
–
–
–
–
Continuous wave signal
f
50 Ω source and load
impedances
Continuous wave signal
f
1710 - 4000 MHz
50 Ω source and load
impedances
–
–
–
–
= 1575.42 MHz
= 50 - 1460 MHz and
Electrical Characteristics
Revision 3.0, 2011-05-30
BGM1032N7