BUZ90A Infineon Technologies AG, BUZ90A Datasheet
BUZ90A
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BUZ90A Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 90 A 600 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot Safe operating area parameter 0.01 , ...
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Typ. output characteristics parameter µ 75W tot ...
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Drain-source on-resistance (on) j parameter 2 8 (on) 6.0 5.0 4.0 98% 3.0 typ 2.0 1.0 0.0 -60 - Typ. capacitances ...
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Avalanche energy parameter 4 340 mJ 280 E AS 240 200 160 120 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 90 A 07/96 ...