HYB25L512160AC-7.5 Infineon Technologies AG, HYB25L512160AC-7.5 Datasheet

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HYB25L512160AC-7.5

Manufacturer Part Number
HYB25L512160AC-7.5
Description
Manufacturer
Infineon Technologies AG
Datasheet

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D a t a S h e e t , R e v . 1 . 3 , A p r i l 2 0 0 4
H Y B 2 5 L 5 1 2 1 6 0 A C – 7 . 5
512MBit Mobi le- RAM
S t an d a r d T e m p e r at u r e R an g e
M e m or y P r o du c t s
N e v e r
s t o p
t h i n k i n g .

Related parts for HYB25L512160AC-7.5

HYB25L512160AC-7.5 Summary of contents

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– 512MBit Mobi le- RAM ...

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... The information in this document is subject to change without notice. Edition 2004-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2004. © All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. ...

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– 512MBit Mobi le- RAM ...

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... HYB25L512160AC–7.5 Revision History: Rev. 1.3 Previous Revision: Rev. 1.2 Page Subjects (major changes since last revision) all Delete extended temperature range (HYE25L512160AC–7.5) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. ...

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... AUTO REFRESH and SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.4.9.1 AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.4.9.2 SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.4.10 POWER DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 3.4.10.1 DEEP POWER DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 3.5 Function Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 4.2 DC Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 4.3 Pin Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 4.4 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 4.5 Operating Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 5 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Data Sheet HYB25L512160AC–7.5 512MBit Mobile-RAM 5 Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... WRITE with Auto Precharge Interrupted by WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Figure 44 AUTO REFRESH Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Figure 45 AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Figure 46 SELF REFRESH Entry Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Figure 47 SELF REFRESH Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Figure 48 POWER DOWN Entry Command Figure 49 POWER DOWN Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Figure 50 Package FBGA- Data Sheet HYB25L512160AC–7.5 512MBit Mobile-RAM 6 Rev. 1.3, 2004-04 ...

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... Part Number Speed Code V DDQ f Clock Frequency ( ) CKmax t Access Time ( ) ACmax t Clock Cycle Time ( ) CKmin Table 2 Memory Addressing Scheme Item Banks Rows Columns Data Sheet HYB25L512160AC–7 CC2 CC3 –7.5 1.65 ...1.95 2.3 ...3.6 133 105 8.0 6.0 7.5 9.5 9.5 9.5 Addresses BA0, BA1 A0 - A12 Unit V MHz ...

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... Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR). A conventional data-retaining power down (PD) mode is available as well as a non-data-retaining deep power down (DPD) mode. The HYB25L512160AC is housed in a 54-ball “chip-size” FBGA package available in Commercial (0°C to 70°C) temperature range. Table 3 ...

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... DD F CLK CKE CAS G A11 A9 BA0 LDQM UDQM DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 9 HYB25L512160AC–7.5 512MBit Mobile-RAM Pin Configuration DQ0 DD DQ2 DQ1 DQ4 DQ3 DQ6 DQ5 LDQS DQ7 RAS WE BA1 CS0 A1 A10/ MPPD0050 CS0 ...

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... I/O Power Supply: Isolated power for DQ output buffers for improved noise immunity: DDQ V = 1.65V..1.95V; or 2.3V..3.6V DDQ V Supply I/O Ground SSQ V Supply Power Supply: Power for the core logic and input buffers Supply Ground SS Data Sheet HYB25L512160AC–7.5 512MBit Mobile-RAM = 2.3V..3. Pin Configuration Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... Figure 3 Functional Block Diagram Data Sheet Bank 1 Bank 0 Memory Array 13 8192 (8192 x 512 x 16) Sense Amplifier IO Gating 2 DQM Mask Logic Column Decoder 9 11 HYB25L512160AC–7.5 512MBit Mobile-RAM Pin Configuration Bank 3 Bank LDQM UDQM Data Output Reg. DQ0- 16 DQ15 Data 16 Input Reg ...

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... No power sequencing is specified during power up or power down provided that one of the following two criteria is met: Data Sheet RFC NOP PRE ARF ARF All Banks 12 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Figure 4). Operational RFC MRD MRD MRS MRS NOP ACT CODE ...

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... CAS Latency CAS Latency 0 Reserved Reserved HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Address Bus BT Burst Length Mode Register Burst Type Sequential Interleave Burst Length A1 A0 Sequential Interleave ...

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... Cn, Cn+1, Cn+2, ... 14 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Interleaved ...

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... HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Address Bus PASR Mode Register PASR all banks 1/2 array (BA1 = 0) 1/4 array (BA1 = BA0 = 0) Reserved Reserved 1/8 array (BA1 = BA0 = RA12 = 0) 1/8 array (BA1 = BA0 = RA12 = RA11 = 0) Reserved Rev ...

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... By default the on-chip temperature sensor is enabled (TCSR = 00, see adjust the self refresh period with the on-chip temperature sensor being disabled. Data Sheet 13). Figure 6 ); the other three TCSR settings use defined temperature values to 16 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... WRITE A Precharge CKEL = Enter Power Down CKEH = Exit Power Down READ = Read w/o Auto Precharge READA = Read with Auto Precharge WRITE = Write w/o Auto Precharge WRITEA = Write with Auto Precharge 17 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Self Refresh Auto REFA Refresh Precharge Power ...

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... Figure 8 shows the basic timing parameters, which apply to all Valid Valid Valid = Don't Care 18 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Notes Bank / Row 3) H L/H Bank / Col 3) ...

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... IH The NO OPERATION (NOP) command is used to perform a NOP to a Mobile-RAM which is selected (CS = LOW). This prevents unwanted commands from being registered during idle states. Operations already in progress are not affected. 19 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Unit Notes max — — ns — ...

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... The command may be issued to both MRD chips in parallel (CS0 = CS1 = 0). MRS NOP t MRD Code (BA0, BA1) and op-code (A0 - A12) Symbol min MRD 20 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Chapter 3.2). The Valid Valid = Don't Care – 7.5 Unit Notes max. — Rev ...

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... NOP ACT NOP NOP ROW RRD RCD Symbol min RCD t 15 RRD 21 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description be “opened” (activated). This Figure specification. A RCD . RRD RD/WR NOP COL Don't Care – 7.5 Unit Notes max. — — ...

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... READ issued to one chip does not interfere with a READ or WRITE being in progress in the other chip of this stacked configuration. t DQZ n+1 = Don't Care 22 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... For the generic READ commands used in the RAS t RAS t RC READ NOP NOP Ba A, Col n Dis AP CL Auto Precharge Dis AP = Disable Auto Precharge 23 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Unit min. max. — 6 — 8 — 1 ...

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... AP = Auto Precharge Dis AP = Disable Auto Precharge (Figure 19). The new READ command should be issued x cycles after NOP NOP READ Ba A, Col n n+1 24 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description t RP NOP PRE NOP NOP Row b Pre All AP Row b Pre Bank ...

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... Col Figure 20. NOP NOP NOP READ Ba A, Col n+1 DO n n+1 DO n+2 25 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP NOP NOP m+1 DO m m+1 DO m+2 = Don't Care NOP NOP NOP b Don't Care Rev ...

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... Data Sheet NOP BST NOP NOP n n+1 DO n+2 NOP NOP t t CSL CSL n+1 26 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Page 35), provided Figure 21. The NOP NOP NOP = Don't Care NOP NOP t CSL DO n+1 DO n+2 = Don't Care Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... Data Sheet NOP NOP NOP NOP t DQZ n+2 DO n+3 Figure 24. With the registration of the WRITE command, DQM acts as 27 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP NOP = Don't Care Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... NOP NOP High n+1 CL=3 High Figure 25. NOP NOP PRE Ba A Pre All AP Pre Bank A CL n+1 28 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description WRITE NOP NOP Ba A, Col b b+1 DI b+2 = Don't Care is met. Please note that NOP NOP ...

Page 29

... Figure n+2 show a single WRITE burst for each supported CAS latency setting. 29 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Figure 26. Basic timings for the DQs are 27; they apply to all write operations. = Don't Care Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... Data In are provided in the programmed order following DI n. Figure 28 WRITE Burst (CAS Latency = 2) Data Sheet t RAS t RC NOP NOP NOP Ba A, Col n Dis n+1 DI n+2 DI n+3 30 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Symbol –7.5 Unit min. max. — — — t ...

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... n+1 DI n+2 DI n+3 (Figure 30) or the last desired data element of a longer burst which is being NOP NOP NOP WRITE Ba A, Col b DI n+1 DI n HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP PRE NOP NOP ACT Ba A, Row b Pre All Row AP ...

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... Col x Col m+1 Figure 32 NOP NOP NOP NOP DI n+1 DI n+2 DI n+3 Figure 33. The BURST TERMINATE command may be used to 32 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP NOP NOP DI m+2 DI m+3 = Don't Care WRITE NOP NOP Ba A, Col b+1 DI b+2 = Don't Care ...

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... Clock Suspend Mode for WRITE Bursts Data Sheet WRITE NOP NOP Ba A, Col n+1 DI n+2 NOP t t CSL CSL n clock cycle 33 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description BST NOP NOP = Don't Care NOP NOP t CSL DI n+2 = Don't Care Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

Page 34

... WRITE NOP NOP NOP Ba A, Col n+2 DI n+3 Figure 36. NOP READ NOP Ba A, Col b CL=2 High-Z DI n+2 Write data are ignored CL=3 High-Z DI n+2 34 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP = Don't Care NOP NOP NOP b b+1 = Don't Care Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... The BURST TERMINATE command is used to truncate READ or WRITE bursts (with Auto Precharge disabled). The most recently registered READ or WRITE command prior to the BURST TERMINATE command will be truncated, as shown in Figure 21 and Figure 35 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description is met NOP ACT Ba A, ...

Page 36

... These parameters account for the number of clock cycles and depend on the operating frequency as follows: no. of clock cycles = specified delay / clock period; round up to next integer. Data Sheet HYB25L512160AC–7.5 The PRECHARGE command is used to deactivate (close) the open row in a particular bank or the open row in all banks ...

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... READ NOP NOP Bank m Col x CL=2 t (bank b+1 NOP NOP WRITE NOP Bank m Col x CL x+1 37 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP NOP x+1 DO x+2 = Don't Care NOP NOP (bank x+2 DI x+3 = Don't Care Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

Page 38

... This makes the address bits “Don’t Care” during an AUTO REFRESH command. The Mobile-RAM requires AUTO REFRESH cycles at an average periodic interval of 7.8 µs (max.). Partial array mode has no influence on auto refresh mode. 38 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP NOP NOP ...

Page 39

... The use of SELF REFRESH mode introduces the possibility that an internally timed event can be missed when CKE is raised for exit from SELF REFRESH mode. Upon exit from SELF REFRESH an extra AUTO REFRESH command is recommended. 39 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description t RC NOP ...

Page 40

... The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or DESELECT command). One clock delay is required for power down entry and exit. Power-down entry and exit is common to both stacked chips as they share a common CKE signal. 40 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP ...

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... Figure 7). Data Sheet t RP NOP NOP High-Z Power Down Entry 41 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description NOP Valid Valid Valid Exit from Any Power Down Command = Don't Care Figure 38) except Rev ...

Page 42

... PRECHARGE (truncate WRITE burst, start precharge) L BURST TERMINATE has been met has been met. No data bursts/accesses and no register RCD 42 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description Notes 1)2)3)4) 6), 10) ...

Page 43

... ACTIVE (select and activate row) H READ (select column and start READ burst) L WRITE (select column and start WRITE burst) L PRECHARGE (deactivate row in bank or banks HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description met. Once is met, the has been met. Once ...

Page 44

... DESELECT or NOP Enter Active Power Down AUTO REFRESH Enter Self Refresh BURST STOP Enter Deep Power Down (valid) Enter Clock Suspend see Table 14 and Table 15 44 HYB25L512160AC–7.5 512MBit Mobile-RAM Functional Description t has been RP t has been RP Notes 1)2)3) ...

Page 45

... V OH DDQ — and must be at same potential. SSQ ; V < V +0.3 DDQ DDQ DD V may undershoot to -0.8 V for pulse width < HYB25L512160AC–7.5 512MBit Mobile-RAM Electrical Characteristics Values Unit min. max. -1.0 4.6 V -1.0 4 0.5 V DDQ V -1.0 + 0.5 V DDQ 0 +70 C ...

Page 46

... Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test) floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level. Data Sheet HYB25L512160AC–7.5 512MBit Mobile-RAM Electrical Characteristics Symbol Values min ...

Page 47

... REF t SREX V = 1.8 V ± 0. 2.3V .. 3.6V; DDQ V V and ; all AC characteristics assume are mandatory. Infineon Technologies recommends to use two clock cycles for WR 47 HYB25L512160AC–7.5 512MBit Mobile-RAM Electrical Characteristics - 7.5 Unit Notes min. max. — — 7.5 ns — — 9.5 ns — — 9.5 ns — ...

Page 48

... Max. Symbol Temperature CC6 CC6 CC6 1 2.3V .. 3.6V; DDQ 48 HYB25L512160AC–7.5 512MBit Mobile-RAM Electrical Characteristics Symbol Values Unit Notes - 7.5 2) CC1 2) I 1.2 mA CC2P CC2N CC3P ...

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... Package Outline BALL A1 INDICATOR TOP VIEW BOTTOM VIEW Figure 50 Package FBGA-54 Data Sheet 8.00 ± 0.10 0.80 49 HYB25L512160AC–7.5 512MBit Mobile-RAM Package Outline P-TFBGA-54-2 JEDEC MO207G Var. DE compatible All Dimensions in mm 1.40 MAX C Rev. 1.3, 2004-04 10212003-BSPE-77OL ...

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... Published by Infineon Technologies AG ...

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