IPB019N08N3G Infineon Technologies AG, IPB019N08N3G Datasheet
IPB019N08N3G
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IPB019N08N3G Summary of contents
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OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for motor drive applications • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • Superior thermal resistance • N-channel, ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 4) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 350 300 250 200 150 100 Safe operating area I =f =25 ° parameter limited ...
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Typ. output characteristics I =f =25 ° parameter 640 560 6 V 480 400 320 5.5 V 240 160 4 ...
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Drain-source on-state resistance R =f =100 A; V DS(on max -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 Drain-source breakdown voltage V =f BR(DSS -60 ...
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PG-TO263-7 (D²-Pak) Rev. 2.1 page 8 IPB019N08N3 G 2008-06-24 ...
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... Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, ...