FFB10UP20S Fairchild Semiconductor, FFB10UP20S Datasheet
FFB10UP20S
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FFB10UP20S Summary of contents
Page 1
... Single Half-Sine Wave T T Operating Junction and Storage Temperature J, STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case 6JC ©2005 Fairchild Semiconductor Corporation FFB10UP20S Rev. A D2-PAK (per diode 25°C unless otherwise noted a Parameter @ T = 120GC 25°C unless otherwise noted a ...
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... F I =10A, di/dt = 200A/2s =10A, di/dt = 200A/2s Avalanche Energy (L = 20mH) AVL * Pulse Test: Pulse Width=3002s, Duty Cycle2% FFB10UP20S Rev. A (per diode 25°C unless otherwise noted a Parameter Min 150 150 30V ...
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... Reverse Voltage , V Figure 5. Typical Reverse Recovery Current 10A =125 100 200 di/dt [A/ FFB10UP20S Rev. A Figure 2. Typical Reverse Current 100 0.1 0.01 0.001 1.5 2.0 0 [V] F Figure 4. Typical Reverse Recovery Time MHz 100 100 ...
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Package Demensions 9.90 1.27 0.10 2.54 TYP 10.00 © -PAK 4.50 0.20 0.20 0.80 0.10 2.54 TYP 10.00 (8.00) (4.40) 0.20 (2XR0.45) +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 0.20 0.80 0.10 Dimensions in Millimeters ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...