FFA30U60DN Fairchild Semiconductor, FFA30U60DN Datasheet

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FFA30U60DN

Manufacturer Part Number
FFA30U60DN
Description
Ffa30u60dn Ultra Fast Recovery Power Rectifier
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FFA30U60DN
Manufacturer:
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12 500
Part Number:
FFA30U60DNTU
Manufacturer:
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©2000 Fairchild Semiconductor International
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switching mode power supply
• Free-wheeling diode for motor application
• Power switching circuits
V
I
I
T
R
V
I
t
I
Q
W
F(AV)
FSM
RM
rr
rr
J,
RRM
FM
rr
AVL
JC
Symbol
Symbol
Symbol
T
STG
*
*
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
Avalanche Energy
F
=30A, di/dt = 200A/ s)
60Hz Single Half-Sine Wave
I
I
@ rated V
F
F
= 30A
= 30A
Parameter
(per diode) T
Parameter
Parameter
(per diode) T
R
FFA30U60DN
1
C
2
=25 C unless otherwise noted
3
C
=25 C unless otherwise noted
T
T
T
T
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C
= 100 C
TO-3P
Min.
1.0
-
-
-
-
-
-
-
1. Anode 2.Cathode 3. Anode
- 65 to +150
Typ.
-
-
-
-
-
-
-
-
Value
Value
600
180
0.8
30
Max.
150
360
2.3
2.1
15
90
8
-
Rev. F, September 2000
Units
Units
Units
C/W
mJ
nC
ns
V
A
A
V
A
C
A

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FFA30U60DN Summary of contents

Page 1

... Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =30A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFA30U60DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...

Page 2

... Figure 1. Typical Forward Voltage Drop vs. Forward Current 300 200 100 0.1 1 Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 1E-3 2.0 2.5 3.0 [V] F 100 Typical Capacitance 278 ...

Page 3

... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. F, September 2000 ...

Page 4

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...

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