FGA15N120ANTDTU-F109 Fairchild Semiconductor, FGA15N120ANTDTU-F109 Datasheet - Page 3

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FGA15N120ANTDTU-F109

Manufacturer Part Number
FGA15N120ANTDTU-F109
Description
Fga15n120antd / Fga15n120antd_f109 1200v Npt Trench Igbt
Manufacturer
Fairchild Semiconductor
Datasheet
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Electrical Characteristics of DIODE
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
Parameter
I
dI/dt = 200 A/μs
I
F
F
= 15A
= 15A
T
C
= 25°C unless otherwise noted
Test Conditions
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
2835
4340
210
280
1.7
1.8
27
31
Max.
6600
330
2.7
40
--
--
--
--
www.fairchildsemi.com
Units
nC
ns
V
A

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