FGAF40N60UFD Fairchild Semiconductor, FGAF40N60UFD Datasheet - Page 5

• Manufacturer Part Number: FGAF40N60UFD
• Description: Fgaf40n60ufd Ultrafast Igbt
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
3000
100
100
0.1
10
10
1
Eon
Eoff
Eoff
Ic MAX (Continuous)
Ic MAX (Pulsed)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
10
0 .0 1
0 .1
1
1
1 E -5
0 .0 2
15
Collector - Emitter Voltage, V
0 .2
0 .0 1
0 .5
0 .1
0 .0 5
sin gle p ulse
Collector Current , Ic (A)
o
C
DC Operation
20
10
25
1 E -4
Common Emitter
V
R
T
T
C
C
CC
G
1ms
= 25 ℃
= 125 ℃
= 10
= 300V, V
30
100 s
100
Fig 17. Transient Thermal Impedance of IGBT
CE
[V]
GE
50 s
35
= ± 15V
1 E -3
Rectangular Pulse Duration [sec]
40
1000
0 .0 1
Fig 16. Turn-Off SOA Characteristics
Fig 14. Gate Charge Characteristics
500
100
15
12
0.1
10
9
6
3
0
1
0
1
Common Emitter
R
(Tc=25 ℃ )
L
=15 Ω
0 .1
Collector-Emitter Voltage, V
30
Gate Charge, Qg (nC)
10
Safe Operating Area
V
GE
=20V, T
Vcc=100V
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + T
60
200V
1
C
300V
=100
t1
t2
100
o
C
CE
90
[V]
C
FGAF40N60UFD Rev. A
1 0
1000
120