FGA120N30D Fairchild Semiconductor, FGA120N30D Datasheet - Page 5

• Manufacturer Part Number: FGA120N30D
• Description: Fga120n30d 300v Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA120N30D Rev. B
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs. Gate
14
12
10
6
5
4
3
2
1
0
1000
8
6
4
2
0
100
4
10
0
C om m on E m itter
R
T
C
0
L
1 2 .5 A
= 8
= 25
td(on)
Resistance
Ω
o
tr
C
30
G a t e - E m it te r V o lta g e , V
2 5 A
10
8
5 0 A
G a te C h a rg e, Q
Gate R esistance, R
60
1 2 0 A
20
1 2
90
g
30
[n C ]
V cc = 200V
G
C o m m o n E m itte r
T
C om m on Em itter
V
I
T
T
C
[
C
C
C C
Ω
C
= 25A
G E
1 6
= 25
= 125
]
= 1 2 5
= 200V, V
120
[V ]
o
C
o
C
40
GE
o
C
G E
= 15V
150
2 0
50
(Continued)
5
Figure 12. Turn-Off Characteristics vs. Gate
Figure 8. Capacitance Charaacteristics
1000
5000
4000
3000
2000
1000
10 00
100
100
0.1
10
10
0
1
0.1
0.1
0
Figure 10. SOA Characteristics
Ic M A X (P ulsed)
Ic M A X (C ontinuous)
S ingle N onrepetitive
P ulse Tc = 25
C urves m ust be derated
linearly w ith increase
in tem perature
Resistance
C oes
C ollector - E m itter V o ltage, V
C ies
C res
10
C ollector-Em itter V oltage, V
1
o
D C O peration
C
G a te R e sista nce, R
20
1
10
1m s
30
C om m on E m itter
V
I
T
T
C
G
C C
C
C
= 25A
C om m on E m itter
V
T
100
= 25
= 125
[
Ω
C
= 2 00 V , V
G E
C E
100
= 25
C E
]
µ
= 0V , f = 1M H z
o
s
[V ]
C
[V ]
o
C
40
10
o
C
td(off)
50
tf
µ
G E
s
= 15V
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1000
30
50