FGA90N30 Fairchild Semiconductor, FGA90N30 Datasheet
FGA90N30
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FGA90N30 Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FGA90N30 Rev. B Description Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum = 20A C solution for PDP applications where low condution loss is essential. TO- 25°C unless otherwise noted ...
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... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGA90N30 Rev. B Package Reel Size TO- 25°C unless otherwise noted C Test Conditions 250μ 0V 250μ ...
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... FGA90N30 Rev. B Figure 2. Typical Output Characteristics ...
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... FGA90N30 Rev. B (Continued) Figure 8. Capacitance Charaacteristics ...
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... Safe O perating Area 20V , T = 100 100 ollector-E m itter V oltage, V FGA90N30 Rev. B (Continued) Figure 14.Turn-Off Characteristics vs Figure 16.Switching Loss vs. Collector Current ...
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... Typical Performance Characteristics Figure 18. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA90N30 Rev. B (Continued) 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] 6 Pdm t1 t2 Duty factor Peak Tj = Pdm × Zthjc + www.fairchildsemi.com ...
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... Mechanical Dimensions ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA90N30 Rev. B TO-3P 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 7 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...