FGA50N100BNT Fairchild Semiconductor, FGA50N100BNT Datasheet - Page 3

• Manufacturer Part Number: FGA50N100BNT
• Description: Fga50n100bnt 1000v, 50a Npt-trench Igbt Co-pak
• Manufacturer: Fairchild Semiconductor

FGA50N100BNT Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
200
160
120
200
160
120
4.5
3.0
1.5
1.0
80
40
80
40
0
0
25
0
0
T
Common Emitter
V
T
T
Characteristics
Common Emitter
V
C
C
C
Temperature at Variant Current Level
GE
Collector-EmitterCase Temperature, T
GE
= 25
= 25
= 125
= 15V
= 15V
1
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
2
C
50
2
15V
20V
4
3
75
10V
4
6
I
C
90A
60A
= 10A
30A
5
100
CE
CE
V
8
[V]
[V]
GE
7V
8V
9V
C
6
= 6V
[
o
C
]
125
10
7
3
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
200
160
120
200
160
120
80
40
80
40
20
16
12
0
0
8
4
0
0
2
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
o
Collector-Emitter Voltage, V
o
C
o
2
4
4
C
C
Gate-Emitter Voltage, V
30A
I
Gate-Emitter Voltage,V
C
= 10A
4
6
8
20V
60A
12
6
8
15V
90A
Common Emitter
T
C
GE
GE
= -40
CE
[V]
[V]
10
16
V
[V]
o
8
C
10V
GE
7V
9V
8V
GE
= 6V
www.fairchildsemi.com
10
12
20