AO4604 Alpha & Omega Semiconductor, AO4604 Datasheet

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AO4604

Manufacturer Part Number
AO4604
Description
Complementary Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4604
Manufacturer:
ALPHAOME
Quantity:
3 000
Part Number:
AO4604
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO4604L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4604 uses advanced trench
technology MOSFETs to provide excellent
R
complementary MOSFETs may be used
in power inverters, and other
applications.Standard Product AO4604 is
Pb-free (meets ROHS & Sony 259
specifications). AO4604L is a Green
Product ordering option. AO4604 and
AO4604L are electrically identical.
DS(ON)
S2
G2
S1
G1
A
and low gate charge. The
SOIC-8
1
2
3
4
8
7
6
5
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
Features
n-channel
V
I
R
< 28mΩ (V
< 42mΩ (V
, T
D
DS
DS(ON)
= 6.9A (V
STG
(V) = 30V
n-channel
G2
Symbol
GS
GS
GS
Max n-channel
R
R
R
R
=10V)
=4.5V)
=10V)
θJA
θJL
θJA
θJL
-55 to 150
D2
S2
1.44
±20
6.9
5.8
30
30
2
R
Device
-5A (V
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
-30V
DS(ON)
p-channel
< 52mΩ (V
< 87mΩ (V
p-channel
G1
GS
Max p-channel
= -10V)
D1
S1
Typ
GS
GS
-55 to 150
48
74
35
48
74
35
= -10V)
= -4.5V)
1.44
±20
-4.2
-30
-20
-5
2
Max Units
62.5
62.5
110
110
40
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4604 Summary of contents

Page 1

... MOSFETs to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs may be used in power inverters, and other applications.Standard Product AO4604 is Pb-free (meets ROHS & Sony 259 specifications). AO4604L is a Green Product ordering option. AO4604 and AO4604L are electrically identical ...

Page 2

... AO4604 N-CHANNEL: Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 3

... AO4604 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 4. (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4604 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θ ...

Page 5

... AO4604 P-CHANNEL: Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 6

... AO4604 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -5V -10V -6V -4. 0.00 1.00 2.00 -V (Volts) DS Figure 1: On-Region Characteristics 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 I =-5A D 120 100 80 60 25° (Volts) GS Figure 5: On-Resistance vs ...

Page 7

... AO4604 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100 T =150°C J(Max) T =25° DS(ON) 10 limited 0. 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...

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