NDH8502P Fairchild Semiconductor, NDH8502P Datasheet - Page 2

• Manufacturer Part Number: NDH8502P
• Description: Dual P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
= -2.2 A, V
= -24 V, V
= V
= -10 V, I
= -15 V, V
= -15 V,
= 0 V, I
= 20 V, V
= -20 V, V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -4.5 V, V
= -10 V, I
= -10 V, R
GS
, I
D
D
GS
= -250 µA
D
D
DS
= - 250 µA
DS
D
D
GEN
GS
DS
DS
= -2.2 A
GS
= -10 V
= -2.2 A
= -1.7 A
= -1 A,
= 0 V
= 0 V
= -5 V
= 0 V
= 0 V,
= -5 V
= 6
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
-0.8
-30
-10
-1
-4
Typ
0.14
0.17
10.9
-1.5
-1.2
340
218
100
0.1
3.8
1.4
3.6
18
28
20
8
Max
-100
0.11
0.18
14.5
100
-2.2
-10
0.2
15
35
50
35
-1
-3
NDH8502P Rev.C
Units
µA
µA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S