NDH8502P Fairchild Semiconductor, NDH8502P Datasheet - Page 3

• Manufacturer Part Number: NDH8502P
• Description: Dual P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Notes:
ELECTRICAL CHARACTERISTICS
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
156
Scale 1 : 1 on letter size paper
JA
R
T
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
JA
o
T
C/W when mounted on a 0.0025 in
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
A
CA
t
is determined by the user's board design.
R
JC
T
J
R
T
A
CA
t
I
2
D
t
R
DS ON
2
pad of 2oz copper.
(T
T
A
J
= 25°C unless otherwise noted)
Conditions
V
GS
= 0 V, I
S
= -0.67 A
(Note 2)
Min
-0.76
Typ
-0.67
Max
JC
-1.2
is guaranteed by
NDH8502P Rev.C
Units
A
V