NDH854P Fairchild Semiconductor, NDH854P Datasheet - Page 4

• Manufacturer Part Number: NDH854P
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
-25
-20
-15
-10
-20
-15
-10
-5
-5
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
0
Figure 1. On-Region Characteristics.
-1
1
0
-50
Figure 5. Transfer Characteristics.
V
V
GS
DS
V
I
-6.0
D
Temperature.
GS
= -10V
-1.5
= -5V
= -5.1A
-25
= -10V
V
-2
V
GS
-5.0
DS
0
T , JUNCTION TEMPERATURE (°C)
J
, GATE TO SOURCE VOLTAGE (V)
-4.5
, DRAIN-SOURCE VOLTAGE (V)
-1
-2.5
-4.0
2 5
-3.5
-3
5 0
T =-55°C
J
-3.5
-3.0
7 5
-2
25°C
1 0 0
-4
125°C
-2.5
-4.5
1 2 5
-3
1 5 0
-5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
2.5
1.5
0.5
Figure 4. On-Resistance Variation with Drain
Figure 2. On-Resistance Variation with Gate
2
1
0
1
2
1
-50
0
0
Figure 6. Gate Threshold Variation with
V
V
GS
GS
Current and Temperature.
Voltage and Drain Current.
= -3.5 V
-25
= -10V
Temperature.
-5
-5
0
T , JUNCTION TEMPERATURE (°C)
-4.0
J
I
I
D
D
-4.5
, DRAIN CURRENT (A)
2 5
, DRAIN CURRENT (A)
-5.0
-10
-10
5 0
T = 125°C
-5.5
J
7 5
25°C
-55°C
-6.0
-15
-15
1 0 0
I
-7.0
D
V
DS
= -250µA
NDH854P Rev.D
= V
-10
1 2 5
GS
-20
-20
1 5 0