NDH8521C Fairchild Semiconductor, NDH8521C Datasheet - Page 5

• Manufacturer Part Number: NDH8521C
• Description: Dual N & P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics: N-Channel
Figure 7. N-Channel Breakdown Voltage Variation
1 5 0 0
1 0 0 0
8 0 0
5 0 0
3 0 0
2 0 0
1 0 0
Figure 9. N-Channel Capacitance Characteristics.
Figure 11. N-Channel Transconductance Variation
1.12
1.08
1.04
0.96
0.92
2 0
1 6
1 2
5 0
8
4
0
0 .1
1
-50
0
with Temperature.
V
DS
I
with Drain Current and Temperature.
D
f = 1 MHz
V
= 250µA
GS
0 .2
= 5V
-25
= 0 V
4
V
DS
T
0
J
0 .5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
I
D
2 5
, DRAIN CURRENT (A)
1
8
5 0
3
1 2
7 5
5
T = -55°C
J
1 0 0
125°C
1 0
25°C
1 6
C oss
C rss
C iss
1 2 5
1 5 0
3 0
2 0
(continued)
0 .0 0 0 1
0 .0 0 1
1 0
0 .0 1
8
6
4
2
0
0 .1
Figure 8. N-Channel Body Diode Forward Voltage
1 5
0
5
1
Figure 10. N-Channel Gate Charge Characteristics.
0
I
D
V
GS
= 3.8A
Variation with Current and Temperature
=0V
0 .2
V
SD
5
, BODY DIODE FORWARD VOLTAGE (V)
Q
0 .4
g
T = 125°C
, GATE CHARGE (nC)
J
0.6
1 0
25°C
-55°C
0 .8
V
DS
= 10V
1 5
20V
1
NDH8521C Rev.C
15V
.
1 .2
2 0